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| High Voltage MOSFET N-Channel, Depletion Mode Preliminary Data Sheet IXTP 02N50D IXTU 02N50D IXTY 02N50D VDSS = 500 V ID25 = 200 mA RDS(on) = 30 Symbol VDSX VDGX VGS VGSM IDSS IDM PD TJ TJM Tstg TL TISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C; TJ = 25C to 150C TC = 25C, pulse width limited by TJ TC = 25C TA = 25C Maximum Ratings TO-220 (IXTP) 500 500 20 30 200 800 25 1.1 -55 ... +150 150 -55 ... +150 V V V V mA mA W W C C C C C Nm/lb. g g g TO-252 (IXTY) G D S D (TAB) GD D (TAB) S TO-251 (IXTU) 1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU) Mounting torque TO-220 TO-220 TO-251 TO-252 300 300 1.3 / 10 4 0.8 0.8 G S D (TAB) Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSX VGS(off) IGSS IDSX(off) RDS(on) ID(on) VGS = -10 V, ID = 25 A VDS = 25V, ID = 25 A VGS = 20 VDC, VDS = 0 VDS = VDSS, VGS = -10 V VGS = 0 V, ID = 50 mA VGS = 0 V, VDS = 25V TJ = 125C Note 1 Note 1 20 250 Characteristic Values min. typ. max. 500 -2.5 -5 100 10 250 30 V V nA A A mA Features Normally ON mode Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching speed Applications Level shifting Triggers Solid state relays Current regulators (c) 2006 IXYS All rights reserved 98861A (01/06) IXTP 02N50D IXTU 02N50D IXTY 02N50D Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note1 100 150 120 mS pF pF pF ns ns ns ns 5 K/W K/W TO-220 AD Outline gfs Ciss Coss Crss td(on) tr td(off) tf RthJC RthCS VDS = 50 V; ID = 200 mA VGS = -10 V, VDS = 25 V, f = 1 MHz 25 5 Vds Vgs RG = 100 V V, ID = 50 mA = 0 V to -10 = 30 (External) 9 4 28 45 Pins: 1 - Gate 3 - Source 2 - Drain TAB - Drain TO-220 0.25 Source-Drain Diode Symbol VSD t rr Test Conditions VGS = -10 V, IF = 200 mA IF = 0.75 A, -di/dt = 10 A/s, VDS = 25 V, VGS = -10V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note1 0.7 1.5 1.0 V s Note1: Pulse test, t 300 s, duty cycle d 2 % TO-251 AA Outline TO-252 AA Outline Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 Pins: 1 - Gate 3 - Source Dim. A A1 b b1 b2 c c1 D E e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 0.89 0.64 0.76 5.21 0.46 0.46 5.97 6.35 2.28 4.57 17.02 8.89 1.91 0.89 1.15 2.38 1.14 0.89 1.14 5.46 0.58 0.58 6.22 6.73 BSC BSC 17.78 9.65 2.28 1.27 1.52 2 - Drain TAB - Drain Inches Min. Max. .086 0.35 .025 .030 .205 .018 .018 .235 .250 .090 .180 .670 .350 .075 .035 .045 .094 .045 .035 .045 .215 .023 .023 .245 .265 BSC BSC .700 .380 .090 .050 .060 Pins: 1 - Gate 3 - Source 2 - Drain TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 |
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